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Low temperature preparation of ferroelectric bismuth titanate thin films
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10.1063/1.3204002
/content/aip/journal/apl/95/5/10.1063/1.3204002
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3204002
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The structure of BIT and the direction of its polarization vector.

Image of FIG. 2.
FIG. 2.

XRD result of (a) RTA processed source 1 BIT, (b) RTA processed source 2 BIT, (c) furnace annealed source 2 BIT, and (d) RTA processed source 2 BIT.

Image of FIG. 3.
FIG. 3.

The procedure of Pt/BIT/Pt capacitor preparation.

Image of FIG. 4.
FIG. 4.

Hysteresis loops for (a) BIT processed with various temperatures and (b) RTA processed BIT tested at various electric fields.

Image of FIG. 5.
FIG. 5.

BIT crystal directions with all possible preparation methods.

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/content/aip/journal/apl/95/5/10.1063/1.3204002
2009-08-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature preparation of ferroelectric bismuth titanate thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/5/10.1063/1.3204002
10.1063/1.3204002
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