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as function of time on a logarithmic scale. The continuous curve is a fit with stretched-exponential time dependence. The inset shows the drain current in the linear region as a function of the applied gate bias for increasing stress time. The gate bias during stress was 10 V and the temperature .
as a function of reciprocal temperature. The line shows that is thermally activated with . The inset shows the corresponding as a function of temperature.
measured before and after (○) water vapor exposure. The continuous curves are a fit with stretched-exponential time dependence. Fitting parameters are in Table I. The inset shows the corresponding changes in the linear transfer curves measured for . The results were obtained in a device using thermal as gate dielectric and previously annealed at .
Activation energy , relaxation time , and dispersion parameter, , at room temperature for investigated transistors, as well as for organic and silicon transistors. The table contains both our data as well as literature data. Values are presented for gate-bias stress in accumulation and recovery.
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