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Influence of N interstitials on the electronic properties of GaAsN alloys
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View: Figures


Image of FIG. 1.
FIG. 1.

Unpolarized Raman spectra of as-grown and annealed . Both spectra show features arising from second order GaAs-like longitudinal and transverse optical phonons from 500 to , and first order GaN-like phonons at . In addition, we observed Raman features , and at frequencies 410 and , respectively, the intensities of which are significantly suppressed after annealing. The reduction in observed by NRA suggests these Raman signatures are attributed to N interstitials.

Image of FIG. 2.
FIG. 2.

(a) Electron mobility, , and (b) free carrier concentration, , for bulk GaAsN:Te and GaAs:Te films as a function of annealing temperature. In GaAsN: Te (GaAs:Te) films, , and increase substantially (remain constant) with increasing annealing-.

Image of FIG. 3.
FIG. 3.

Resistivity, , as a function of measurement- for an as-grown GaAs:Te film and GaAsN:Te films before and after annealing. For as-grown films with decreasing measurement-, increase substantially (GaAsN:Te) or remains constant (GaAs:Te).

Image of FIG. 4.
FIG. 4.

Free carrier concentration, , as a function of inverse temperature for films annealed at different temperatures. Two distinct -dependent regimes of are apparent: , increases exponentially with increasing ; , is independent of . In order to use a two-level system formalism to extract the activation energy of N-induced deep donor state, is also plotted in open circles for .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of N interstitials on the electronic properties of GaAsN alloys