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Molecular beam epitaxy of on Si (001): Early stages of the growth and strain relaxation
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10.1063/1.3193548
/content/aip/journal/apl/95/6/10.1063/1.3193548
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3193548
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) High-resolution TEM cross-sectional view of sample A and (b) corresponding diffraction pattern.

Image of FIG. 2.
FIG. 2.

RHEED patterns recorded during STO growth on the [110] Si azimuth: (a) Si surface before growth and (b)–(d) after the growth of 2, 4, and 30 ML of STO, respectively.

Image of FIG. 3.
FIG. 3.

Evolution of the intensity of the RHEED diffraction lines (a) and of the STO lattice parameter (b) (as deduced form RHEED diffraction line spacing).

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/content/aip/journal/apl/95/6/10.1063/1.3193548
2009-08-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3193548
10.1063/1.3193548
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