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Electrical transport in laser-crystallized polycrystalline silicon-germanium thin-films
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10.1063/1.3194147
/content/aip/journal/apl/95/6/10.1063/1.3194147
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3194147
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependent dark conductivity of laser-crystallized and crystallized employing the sbs and the one-pulse process. The inset shows as a function of indicating that hopping dominates the transport in sbs crystallized .

Image of FIG. 2.
FIG. 2.

Temperature dependent dark conductivity of poly- as a function of the hydrogenation time .

Image of FIG. 3.
FIG. 3.

Absorption coefficient as a function of the photon energy, , for poly- before (solid curve) and after (dashed curve) hydrogen passivation for at . The sample was crystallized using a single laser pulse.

Image of FIG. 4.
FIG. 4.

Schematic band diagram (left) and corresponding DOS distribution (right) at the grain boundaries of laser-crystallized poly-SiGe thin-films. , , and denote the conduction band, the valence band, and the Fermi energy, respectively. and are the charge transition levels for the Ge db, which are separated by the correlation energy .

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/content/aip/journal/apl/95/6/10.1063/1.3194147
2009-08-10
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical transport in laser-crystallized polycrystalline silicon-germanium thin-films
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3194147
10.1063/1.3194147
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