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Temperature dependent dark conductivity of laser-crystallized and crystallized employing the sbs and the one-pulse process. The inset shows as a function of indicating that hopping dominates the transport in sbs crystallized .
Temperature dependent dark conductivity of poly- as a function of the hydrogenation time .
Absorption coefficient as a function of the photon energy, , for poly- before (solid curve) and after (dashed curve) hydrogen passivation for at . The sample was crystallized using a single laser pulse.
Schematic band diagram (left) and corresponding DOS distribution (right) at the grain boundaries of laser-crystallized poly-SiGe thin-films. , , and denote the conduction band, the valence band, and the Fermi energy, respectively. and are the charge transition levels for the Ge db, which are separated by the correlation energy .
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