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Effect of threshold voltage instability on field effect mobility in thin film transistors deduced from constant current measurements
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10.1063/1.3195641
/content/aip/journal/apl/95/6/10.1063/1.3195641
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3195641
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Constant current measurement of TFTs with gate dielectric. Observe that a constant current yields a constant gate voltage because of zero threshold voltage shift in the TFT.

Image of FIG. 2.
FIG. 2.

Constant current measurement of TFTs with gate dielectric. Unlike in Fig. 1, a constant current does not yield a constant gate voltage because of threshold voltage shift in the TFT, whose rates and saturation values are gate voltage dependent.

Image of FIG. 3.
FIG. 3.

Timing diagram (not drawn to scale) showing the voltage pulses used to decouple the effect of TFT instability on the transfer characteristics.

Image of FIG. 4.
FIG. 4.

Transfer characteristics of TFTs measured using the conventional (constant voltage) method and the alternative constant current measurement technique.

Image of FIG. 5.
FIG. 5.

Transconductance curves showing a discrepancy close to a factor of 7 in peak values with the conventional and alternative extraction techniques.

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/content/aip/journal/apl/95/6/10.1063/1.3195641
2009-08-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of threshold voltage instability on field effect mobility in thin film transistors deduced from constant current measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3195641
10.1063/1.3195641
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