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Planar S-(S/F)-S Josephson junctions induced by the inverse proximity effect
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Sample layout, and denote the current and voltage electrodes used for the four-point measurements. (b) The zoom of the weak link showing three links in series made by shadow evaporation.

Image of FIG. 2.
FIG. 2.

(a) dependence of the junction measured with an ac bias current of 100 nA, (b) differential resistance vs bias current characteristics of the junction at several temperatures, and (c) zoom of the typical curve at 6 K.

Image of FIG. 3.
FIG. 3.

The applied magnetic field dependencies of the critical current showing the curves at two different ranges of the field (a) taken at 6 and (b) at 5.9 K. Insets: pictures of the weak link with marked areas responsible for the visible period of the oscillations.

Image of FIG. 4.
FIG. 4.

The rf measurements performed at two frequencies 8 GHz (left column) and 16 GHz (right column). (a) Color scale plots vs bias current and applied microwave power showing that the density of Shapiro steps is twice as much at 8 than at 16 GHz, (b) examples of differential characteristics vs at certain power (shifted for better clarity), and (c) the curve vs voltage obtained by integration showing the Shapiro steps at for 8 GHz and for 16 GHz, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Planar S-(S/F)-S Josephson junctions induced by the inverse proximity effect