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Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor
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10.1063/1.3200245
/content/aip/journal/apl/95/6/10.1063/1.3200245
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3200245
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of a fabricated DSSB MOSFET and experimental setup of the charge pumping measurement. The inset shows the proper alignment of the gate and drain pulses. (b) Simulation results of the surface potential of front-interface and back-interface by a change in the front-gate voltages while the back gate is biased for strong accumulation .

Image of FIG. 2.
FIG. 2.

(a) vs curves measured before and after CHE stress for a conventional MOSFET. In addition, the changes in the value of are represented according to the applied junction bias either into the source or the drain. [(b) and (c)] Schematic diagram of the charge pumping measurement with . The grayed region near the junction represents the depletion region caused by .

Image of FIG. 3.
FIG. 3.

(a) vs curves measured before and after CHE stress for a DSSB MOSFET. In addition, the changes in the value of are represented according to applied junction bias either into the source or the drain. [(b) and (c)] Schematic diagram of the charge pumping measurement with . The grayed region near the junction represents the depletion region caused by .

Image of FIG. 4.
FIG. 4.

vs curves measured before and after CHE stress for a DSSB MOSFET according to the stress time. In the case of a short stress time, the depletion region at the source junction eliminated the effect of CHE-induced interface traps, allowing to return to its initial value.

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/content/aip/journal/apl/95/6/10.1063/1.3200245
2009-08-12
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3200245
10.1063/1.3200245
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