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Characterization of boron charge traps at the interface of using second harmonic generation
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10.1063/1.3202420
/content/aip/journal/apl/95/6/10.1063/1.3202420
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3202420
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) TD-SHG signal from B-doped silicon . Inset is from Sb-doped silicon . At the beginning of the each measurement the beam was blocked, and later it was blocked again for a short period. (b) The interpretation of the SHG data corresponding to the interface electric fields. White arrow: electric field due to boron charge traps and dark arrow: electric field due to oxygen traps on the surface.

Image of FIG. 2.
FIG. 2.

(a) Depiction of boron charge traps formed in boron-doped silicon during oxidation. White arrows: the electric field from the boron charge traps and photoinjected electron-induced oxygen charge traps. Dark arrow: the electric field from the oxygen traps. (b) Blue (upper) graph: filling both traps simultaneously between 10 and 178 s and then filling only the oxygen charge traps after 266 s. Red (lower) graph: filling only the boron-induced charge traps first between 10 and 178 s and then filling only the oxygen charge traps after 266 s. The sample is B-doped silicon .

Image of FIG. 3.
FIG. 3.

(a) SHG results from B-doped silicon collected using different laser powers. (b) SHG results B-doped silicon using different laser powers. The data were taken under identical experimental conditions.

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/content/aip/journal/apl/95/6/10.1063/1.3202420
2009-08-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of boron charge traps at the interface of Si/SiO2 using second harmonic generation
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3202420
10.1063/1.3202420
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