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Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography
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10.1063/1.3204013
/content/aip/journal/apl/95/6/10.1063/1.3204013
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3204013
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM micrographs to show different stages in the formation of nanoscale pattern using block copolymer self assembly and the evolution of GaSb films on such nanopatterned GaAs substrate. (a) PS--PMMA based cylindrical pattern, (b) after removal of PMMA cylinders, (c) post CHF3/Ar RIE, (d) after 30 s of GaSb growth, (e) after 1 min of GaSb growth, and (f) 200 nm thick GaSb film on nanopatterned GaAs.

Image of FIG. 2.
FIG. 2.

A linear plot of the HRXRD ( scan) of 200 nm thick GaSb film grown at on both the nanopatterned and nonpatterned (001) GaAs substrate. The scans were normalized by the GaAs peak height.

Image of FIG. 3.
FIG. 3.

FWHM of the GaSb peak with varying thickness grown on both nanopatterned and nonpatterned GaAs. The FWHM decreases with increasing film thickness. All the GaSb films were grown at a constant temperature of .

Image of FIG. 4.
FIG. 4.

(a) Cross-sectional TEM micrograph of 200 nm thick GaSb film grown on nanopatterned GaAs at showing twining activities but few dislocations. (b) Cross-sectional TEM micrograph of 200 nm thick GaSb film grown on nonpatterned GaAs at . Large islands with {111} facets and a high density of dislocations can be seen.

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/content/aip/journal/apl/95/6/10.1063/1.3204013
2009-08-11
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3204013
10.1063/1.3204013
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