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Normalized absorption spectra of the CoGa:ZnO thin films on (a) Co and (c) Ga -edges, and the radial distribution functions of (b) Co and (d) Ga from Fourier transform magnitude of EXAFS of Co and Ga -edges, respectively.
(a) Resistivity, carrier concentration, and Hall mobility of the CoGa:ZnO thin films as a function of Ga concentration. (b) The corresponding Fermi temperature and the mean free path at 300 K were estimated.
(a) The ratio of carrier density to the number of Co ions , saturation moment and anomalous Hall conductivity as a function of Ga concentration at 300 K. The inset shows the anomalous Hall resistivity and perpendicular magnetization for a typical sample at 300 K. (b) The saturation moment at 300 K as a function of ; the inset shows the loops of the CoGa:ZnO thin films with 2% Ga doping.
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