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Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
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10.1063/1.3204446
/content/aip/journal/apl/95/6/10.1063/1.3204446
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3204446
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematics of the growth temperature, TMIn-flow rate, and In-content for the growths of three-layer staggered InGaN QW with graded growth-temperature profiles and (b) the In-contents in MOCVD-grown layer as a function of growth temperature.

Image of FIG. 2.
FIG. 2.

(a) CL spectra and (b) integrated CL intensities of conventional and three-layer staggered InGaN QWs emitting at 520 nm with various CL excitation current at .

Image of FIG. 3.
FIG. 3.

(a) EL spectra and (b) light output power vs current density for conventional InGaN QW and three-layer staggered InGaN QW LEDs emitting with peak wavelengths at 520–525 nm, with the corresponding band lineups schematic of three-layer staggered InGaN QW.

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/content/aip/journal/apl/95/6/10.1063/1.3204446
2009-08-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3204446
10.1063/1.3204446
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