1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Controllable resistance switching behavior of double layers for nonvolatile memory applications
Rent:
Rent this article for
USD
10.1063/1.3204450
/content/aip/journal/apl/95/6/10.1063/1.3204450
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3204450

Figures

Image of FIG. 1.
FIG. 1.

Current vs voltage characteristics of (a) and (b) memory devices. The inset images show the corresponding cross-sectional FESEM.

Image of FIG. 2.
FIG. 2.

and dispersions for structures (open circles), (close circles) structure according to switching cycles.

Image of FIG. 3.
FIG. 3.

(close circles), (open circles) dispersions for (a) structures, (b) structure according to switching cycles, and (c) Variations of switching voltage with thicknesses.

Image of FIG. 4.
FIG. 4.

HRTEM images of (a) interface before resistive switching, (b) (300 nm), and (c) (50 nm) interfaces after resistive switching.

Tables

Generic image for table
Table I.

Comparison of the memory switching parameters.

Loading

Article metrics loading...

/content/aip/journal/apl/95/6/10.1063/1.3204450
2009-08-12
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3204450
10.1063/1.3204450
SEARCH_EXPAND_ITEM