Full text loading...
Current vs voltage characteristics of (a) and (b) memory devices. The inset images show the corresponding cross-sectional FESEM.
and dispersions for structures (open circles), (close circles) structure according to switching cycles.
(close circles), (open circles) dispersions for (a) structures, (b) structure according to switching cycles, and (c) Variations of switching voltage with thicknesses.
HRTEM images of (a) interface before resistive switching, (b) (300 nm), and (c) (50 nm) interfaces after resistive switching.
Comparison of the memory switching parameters.
Article metrics loading...