1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Metal-oxide-semiconductor capacitors with dielectrics grown on by chemical beam deposition
Rent:
Rent this article for
USD
10.1063/1.3204465
/content/aip/journal/apl/95/6/10.1063/1.3204465
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3204465
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HAADF/STEM cross-section image of the interface along after a forming gas anneal at .

Image of FIG. 2.
FIG. 2.

(a) Frequency-dependent characteristics for a 30 nm thick film with a Pt top contact measured at room temperature. The inset shows the hysteresis measured at 1 MHz. (b) Accumulation capacitance (measured at 3.5 V) as a function of frequency.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependent characteristics of a 30 nm thick film with a Pt top contact measured at 50 kHz. The inset shows the surface potential as a function of gate voltage calculated from the Berglund integral. (b) Normalized capacitance (to the maximum capacitance, , at 1 MHz) as a function of applied gate voltage for a 30 nm thick film with Ta, Mo and Pt electrodes.

Loading

Article metrics loading...

/content/aip/journal/apl/95/6/10.1063/1.3204465
2009-08-14
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3204465
10.1063/1.3204465
SEARCH_EXPAND_ITEM