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Reversible colossal resistance switching in : Cryogenic nonvolatile memories
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10.1063/1.3204690
/content/aip/journal/apl/95/6/10.1063/1.3204690
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3204690
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Logarithmic resistance vs temperature at various voltages. Filled circles represent the data for the cooling measurement, while empty circles are taken upon warming after cooling in the presence of applied electric fields (FCW). The schematic of the specimen for our two-probe measurement is shown in the inset. (b) Voltage vs logarithmic temperature plot. Logarithmic current vs applied voltage plot at various temperatures is shown in the inset. is defined as the isothermal threshold voltage.

Image of FIG. 2.
FIG. 2.

(a) vs characteristics of COI (virgin insulating) and MG (induced insulating) phases at 2 K. (b) curves of MG and FM phases at 2 K. The curves are obtained on six consecutive states (alternating between induced insulating and metallic phases) and three sets of curves for each phase coincide with each other well, confirming high reproducibility. (c) Schematics of various phases: COI, MG, and FM phases. Red curves represent the conducting paths and segments in the FM phase and MG phases, respectively.

Image of FIG. 3.
FIG. 3.

(a) Logarithmic -time plot. Blue and red circles indicate off and on resistance states, respectively. The voltage pulses of and were used to create the on and off states. The 1 V current for each resistance state was alternatively measured during 300, 150, 60, and 30 s in a sequence. (b) Stability of the log (on/off) ratio at 1 V through cycling. The voltage sequence of 5 V (insulator-to-metal switching)-1 V (reading)-65 V (metal-to-insulator switching)-1 V (reading) was used for each cycle, as schematically shown in the inset. (c) Generation of multilevel intermediate resistance states, shown in plot. Red, black, and blue colored circles correspond to FM, intermediate, and MG resistance states. 2, 2.5, and 2.7 V were applied to create the intermediate states with , , and , respectively.

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/content/aip/journal/apl/95/6/10.1063/1.3204690
2009-08-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reversible colossal resistance switching in (La,Pr,Ca)MnO3: Cryogenic nonvolatile memories
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3204690
10.1063/1.3204690
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