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Histograms of the simulated energy distributions of the implanted ions for different time intervals: (a) 1, (b) 20, (c) 40, and (d) using a pulse rise time of .
Nitrogen atoms depth profiles acquired from the center of the samples after undergoing EGD-PIII and traditional PIII using the same implanting parameters of −13 kV (bias voltage), 50 Hz (pulsing frequency), (pulse duration), and 30 SCCM (gas flux).
Retained doses of nitrogen for different pulse widths (EGD-PIII) at an implanting voltage of −13 kV, frequency of 50 Hz, pulse widths of 40 and (the distances of the analysis area from the center are 0, 20, and 40 mm).
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