1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Analysis of charge loss in nonvolatile memory with multi-layered SiC nanocrystals
Rent:
Rent this article for
USD
10.1063/1.3205112
/content/aip/journal/apl/95/6/10.1063/1.3205112
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3205112
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional FE-TEM image of multilayered SiC nanocrystals embedded in dielectrics. The inset figure shows the HR-TEM image of a SiC nanocrystal. (b) FTIR spectra of multilayered SiC nanocrystals embedded in the dielectric layer.

Image of FIG. 2.
FIG. 2.

Subthreshold characteristics as a function of applied bias at for the nonvolatile memory with multilayered SiC nanocrystals.

Image of FIG. 3.
FIG. 3.

(a) P/E speeds and (b) retention characteristics of multilayered SiC nanocrystal memory at temperatures of 25, 75, and .

Image of FIG. 4.
FIG. 4.

Normalized charge losses as a function of retention time at different temperatures. The inset figure shows Arrhenius plots of retention time characteristics for charge losses of 25%, 40%, and 50%.

Loading

Article metrics loading...

/content/aip/journal/apl/95/6/10.1063/1.3205112
2009-08-10
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of charge loss in nonvolatile memory with multi-layered SiC nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3205112
10.1063/1.3205112
SEARCH_EXPAND_ITEM