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(a) Cross-sectional FE-TEM image of multilayered SiC nanocrystals embedded in dielectrics. The inset figure shows the HR-TEM image of a SiC nanocrystal. (b) FTIR spectra of multilayered SiC nanocrystals embedded in the dielectric layer.
Subthreshold characteristics as a function of applied bias at for the nonvolatile memory with multilayered SiC nanocrystals.
(a) P/E speeds and (b) retention characteristics of multilayered SiC nanocrystal memory at temperatures of 25, 75, and .
Normalized charge losses as a function of retention time at different temperatures. The inset figure shows Arrhenius plots of retention time characteristics for charge losses of 25%, 40%, and 50%.
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