1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency
Rent:
Rent this article for
USD
10.1063/1.3205127
/content/aip/journal/apl/95/6/10.1063/1.3205127
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3205127
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Potential profiles and the wave functions of the first conduction subband (C1) and the first valence subband (HH1) at zone center for the ground state of (a) conventional, (b) staggered, and (c) dip-shaped InGaN/GaN QW structures.

Image of FIG. 2.
FIG. 2.

(a) Transition wavelengths and (b) hole effective masses as a function of a carrier density of conventional, staggered, and dip-shaped InGaN/GaN QW structures.

Image of FIG. 3.
FIG. 3.

(a) Envelope wave functions at the zone center and (b) optical matrix elements produced by Kane’s parameter of conventional, staggered, and dip-shaped InGaN/GaN QW structures.

Image of FIG. 4.
FIG. 4.

Spontaneous emission coefficient of conventional, staggered, and dip-shaped InGaN/GaN QW structures. Spontaneous emission spectra are obtained at a sheet carrier density of .

Loading

Article metrics loading...

/content/aip/journal/apl/95/6/10.1063/1.3205127
2009-08-12
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dip-shaped InGaN/GaN quantum-well light-emitting diodes with high efficiency
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3205127
10.1063/1.3205127
SEARCH_EXPAND_ITEM