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Strong anisotropy of magnetization and sign reversion of ordinary Hall coefficient in single crystal magnetic semiconductor films
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10.1063/1.3206664
/content/aip/journal/apl/95/6/10.1063/1.3206664
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3206664
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RHEED patterns along [110] azimuth of (a) Ge buffer layer, (b) film, (c) film, and (d) XRD scan of substrate and films with and 10.4%.

Image of FIG. 2.
FIG. 2.

(a) Hysteresis loops of the films with , 4.1%, 5.1%, 7.2%, and 10.4% measured at 5 K. (b) The hysteresis loop of the film with magnetic field parallel and perpendicular to the film plane, respectively.

Image of FIG. 3.
FIG. 3.

The temperature dependence of the sheet resistance of film on substrate and the pure substrate. The inset shows the corresponding dependence of on for the film on substrate. The solid straight line is a guide to eyes.

Image of FIG. 4.
FIG. 4.

The magnetic field dependence of Hall resistivity (the curve) of film measured at (a) 30 K, (b) 50 K, (c) 75 K, and (d) 130 K, respectively.

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/content/aip/journal/apl/95/6/10.1063/1.3206664
2009-08-14
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strong anisotropy of magnetization and sign reversion of ordinary Hall coefficient in single crystal Ge1−xMnx magnetic semiconductor films
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/6/10.1063/1.3206664
10.1063/1.3206664
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