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Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

Low-magnification -contrast STEM image of the (0001) surface, showing the emergence of V-defects with sixfold symmetry connected with (0001) terminating threading dislocations. Brighter contrast regions indicate enhanced indium content.

Image of FIG. 2.
FIG. 2.

Plan-view HRTEM image of the film, depicting a V-defect in the form of an inverted pyramid with six sidewall facets. Their edges are along directions, whereas their traces with the (0001) surface are the prismatic directions.

Image of FIG. 3.
FIG. 3.

High-resolution -contrast STEM image revealing high In concentration along the traces between the sidewalls, the apex of the pyramid as well as the traces of the planes with the (0001) surface (arrows). Away from the edges, the facets exhibit a darker contrast.

Image of FIG. 4.
FIG. 4.

EDX line scan, illustrating the In/Al signal ratio across a V-defect (inset). Increased In concentration regions are detected at positions around 10 nm and 70 nm, which correspond to the surrounding area of the traces between the sidewalls of the pyramid and the (0001) surface, whereas the position of 45 nm to its apex.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy