1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
100 ps precessional spin-transfer switching of a planar magnetic random access memory cell with perpendicular spin polarizer
Rent:
Rent this article for
USD
10.1063/1.3206919
/content/aip/journal/apl/95/7/10.1063/1.3206919
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/7/10.1063/1.3206919
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Macrospin simulation of precessional switching at 0 K: , , and , FL demagnetizing field coefficients , , and . Switching probability is plotted as a function of current pulse width and density amplitude (: black and : white). [(a) and (b)] FL submitted to ST influence from only , electrons flowing from to FL (a) or from FL to (b). [(c) and (d)] FL submitted to the ST influence from both and AL , electrons flowing from to FL (c) or from FL to (d). The initial state is a P alignment of FL and AL magnetizations.

Image of FIG. 2.
FIG. 2.

(a) Experimental setup. (b) Static hysteresis loop measured at low current density .

Image of FIG. 3.
FIG. 3.

Switching probability for a positive current pulse of amplitude ranging from 4.5 mA to 6.4 mA . The initial state corresponds to P (a) or AP (b) alignment of FL and AL magnetizations.

Loading

Article metrics loading...

/content/aip/journal/apl/95/7/10.1063/1.3206919
2009-08-20
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 100 ps precessional spin-transfer switching of a planar magnetic random access memory cell with perpendicular spin polarizer
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/7/10.1063/1.3206919
10.1063/1.3206919
SEARCH_EXPAND_ITEM