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Simultaneous two-level lasing in GaInAsSb/GaSb strained quantum-well lasers
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10.1063/1.3207826
/content/aip/journal/apl/95/7/10.1063/1.3207826
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/7/10.1063/1.3207826
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured threshold current density as a function of inverse cavity length. Solid squares indicate devices that start lasing at the ground level and the triangle represents the long device, which starts lasing from the second quantum well level.

Image of FIG. 2.
FIG. 2.

Measured emission spectra of long device with a wide ridge at a current density of at 288 K under cw operation. The laser line at 0.456 eV corresponds to the ground level transition, whereas the laser line at 0.5 eV corresponds to the excited level transition.

Image of FIG. 3.
FIG. 3.

Wavelength switching as a function of laser current for a long device, with a wide ridge.

Image of FIG. 4.
FIG. 4.

Evolution of the measured emission spectra for a long device, with a wide ridge, under cw operation, at 288 K.

Image of FIG. 5.
FIG. 5.

Measured characteristic of a long laser with a wide ridge under cw operation.

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/content/aip/journal/apl/95/7/10.1063/1.3207826
2009-08-18
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simultaneous two-level lasing in GaInAsSb/GaSb strained quantum-well lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/7/10.1063/1.3207826
10.1063/1.3207826
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