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SEM images tilted with 30° of LLO N-polar GaN surface etched with hot at for (a) 10 min and (b) 20 min.
(a) Dependences of density and base size of the dodecagonal pyramids formed on N-polar GaN on the etching temperature for 5 min. (b) The Arrhenius plot of pyramid density versus inversely of .
SEM images of LLO N-polar GaN surface etched with hot at for 5 min taken (a) from the top and (b) tilted with 30° angle.
Schematic drawing of the formation process of a pyramid. The oblique angle of the facets is determined by the ratio of normal etch rate and tangent etch rate .
(a) Calculation result of LEF of LEDs as a function of the pyramids density. Inset of (a) shows the schematics of the LED model used in the ray-tracing simulation. [(b)–(d)] SEM images of rough surface of VTF LEDs etched by hot at for 2, 5, and 10 min, respectively. (e) Experimental curves of the nonetched and etched samples.
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