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Crystallization times of Ge–Te phase change materials as a function of composition
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10.1063/1.3212732
/content/aip/journal/apl/95/7/10.1063/1.3212732
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/7/10.1063/1.3212732
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Figures

Image of FIG. 1.
FIG. 1.

(a) as a function of laser power and duration for a single-pulse experiment on amorphous, as deposited Ge–Te with 41.5 at. % Ge. Arrow points to laser spot shown in (b). (b) Pulse laser power and measured by the probe laser during a 20 mW, pump pulse.

Image of FIG. 2.
FIG. 2.

Crystallization time as a function of Ge fraction for as-deposited, amorphous and melt-quenched, amorphous Ge–Te materials.

Image of FIG. 3.
FIG. 3.

(a) (%) caused by second, variable pulse for a prepulse experiment on crystalline Ge–Te with 41.5 at. % Ge. Prepulse fixed at 100 ns, 30 mW. Note the different time scales in Figs. 1 and 3. Arrow points to laser spot shown in (b). (b) Pulse laser power and measured by the probe laser during a 20 mW, 700 ns pulse.

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/content/aip/journal/apl/95/7/10.1063/1.3212732
2009-08-21
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystallization times of Ge–Te phase change materials as a function of composition
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/7/10.1063/1.3212732
10.1063/1.3212732
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