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(a) Extracted SBH based on assumption of thermionic emission theory as a function of for and −1 V. The inset displays the measured transfer characteristics for and −1 V. (b) Simulated energy band diagram regarding each distinctive region indicated in (a).
Extracted SBH as a function of according to the spacer thickness. In the case of thick spacer devices, various bias conditions of the designed dummy-gate are used to analyze the carrier injection mechanism as a parameter.
Extracted SBH vs with adoption of a new parameter: of 0, −3, −5, −7, and −9 V (from the left to right).
Simulated energy band diagram of the off-state at the interface between the buried oxide and the channel. and denote the intrinsic barrier height by the work function of PtSi and the extrinsic height by the built-in potential, respectively.
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