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Characterization of current injection mechanism in Schottky-barrier metal-oxide-semiconductor field-effect transistors
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10.1063/1.3204439
/content/aip/journal/apl/95/8/10.1063/1.3204439
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/8/10.1063/1.3204439
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Extracted SBH based on assumption of thermionic emission theory as a function of for and −1 V. The inset displays the measured transfer characteristics for and −1 V. (b) Simulated energy band diagram regarding each distinctive region indicated in (a).

Image of FIG. 2.
FIG. 2.

Extracted SBH as a function of according to the spacer thickness. In the case of thick spacer devices, various bias conditions of the designed dummy-gate are used to analyze the carrier injection mechanism as a parameter.

Image of FIG. 3.
FIG. 3.

Extracted SBH vs with adoption of a new parameter: of 0, −3, −5, −7, and −9 V (from the left to right).

Image of FIG. 4.
FIG. 4.

Simulated energy band diagram of the off-state at the interface between the buried oxide and the channel. and denote the intrinsic barrier height by the work function of PtSi and the extrinsic height by the built-in potential, respectively.

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/content/aip/journal/apl/95/8/10.1063/1.3204439
2009-08-25
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of current injection mechanism in Schottky-barrier metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/8/10.1063/1.3204439
10.1063/1.3204439
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