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Practical B and P doping via quaternaries lattice matched to Ge: Structural, electrical, and strain behavior
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Image of FIG. 1.
FIG. 1.

(a) Bright field XTEM micrograph of a lattice matched film grown directly on Si (100). (b) High resolution image showing a fully commensurate interface between the two layers. (c) Resistivity plots of B-doped and bulk Ge as a function of doping level.

Image of FIG. 2.
FIG. 2.

(Top) HRXRD (224) RSM of -type SiGeSn/Ge is compared with the on-axis (004) plot indicating that the layers are lattice matched, cubic, and virtually relaxed. (Bottom) The corresponding data for a tensile strained (0.7%) SiGeSn/Ge film indicates that the epilayer is fully coherent to the buffer, which in turn is nearly relaxed with respect to Si.

Image of FIG. 3.
FIG. 3.

Experimental compensation ratio for alloys lattice matched to Ge. Squares (triangles, circles) correspond to samples with (, ) Sn concentration. The error bars were calculated by assuming an uncertainty of 0.005 for all group-IV concentrations. The solid line is a fit with Eq. (1). The dotted line indicates the compensation ratio for intrinsic alloys.


Generic image for table
Table I.

Boron concentration , resistivity , and mobility dependence in three samples containing , 5%, and 8% Sn.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Practical B and P doping via SixSnyGe1−x−y−zMz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior