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Dark current and differential conductance as a function of applied gate voltage. The inset shows the characteristic under forward bias condition.
Photocurrent and dark current as a function of voltage at reverse bias.
Spectral response of the reported photosensor . The spectral response of a commercial UV-enhanced Si sensor is also plotted for comparison.
A PL excitation spectrum of Si-nc SL measured at 770 nm PL emission. The inset shows its emission spectrum excited with a 300 nm excitation.
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