1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Threshold field of phase change memory materials measured using phase change bridge devices
Rent:
Rent this article for
USD
10.1063/1.3210792
/content/aip/journal/apl/95/8/10.1063/1.3210792
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/8/10.1063/1.3210792

Figures

Image of FIG. 1.
FIG. 1.

At left, pulses are supplied to the device under test from an arbitrary waveform generator, while an oscilloscope measures device voltage and current independently. At right, a scanning electron microscopy image of the fabricated bridge device shows a narrow line of phase change material bridging two planarized TiN contacts separated by insulating . The inset shows the active device volume, located above the narrow dielectric gap between the two electrodes (Ref. 14).

Image of FIG. 2.
FIG. 2.

(a) Initial resistance vs device length, (b) threshold voltage vs resistance, and (c) threshold voltage vs device length for amorphous GeSb devices tested from the amorphous-as-deposited state, with bridge widths of 40 nm (squares) and 140 nm (circles).

Image of FIG. 3.
FIG. 3.

Threshold voltage vs device length, for four amorphous-as-deposited phase change materials. The slopes of the linear fits are used to determine the threshold fields for each material, as shown in Table I. Different symbols indicate different bridge widths.

Tables

Generic image for table
Table I.

Critical fields for threshold switching calculated from slopes of data shown in Fig. 3.

Loading

Article metrics loading...

/content/aip/journal/apl/95/8/10.1063/1.3210792
2009-08-24
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threshold field of phase change memory materials measured using phase change bridge devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/8/10.1063/1.3210792
10.1063/1.3210792
SEARCH_EXPAND_ITEM