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Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Electrical resistance of Sb–N films of varying N content as measured in situ at the heating rate of . (b) Carrier concentration, mobility, and resistivity of the crystalline Sb–N films.

Image of FIG. 2.
FIG. 2.

XRD spectra of the Sb and Sb–N films at (a) as-deposited states and (b) annealed states at for 5 min, respectively. Vertical lines denote the 2 theta positions for pure Sb.

Image of FIG. 3.
FIG. 3.

TEM images and the associated diffraction patterns of (a) Sb and (b) films, annealed at for 5 min.

Image of FIG. 4.
FIG. 4.

and core level XPS spectra of the as-deposited and annealed states of Sb and films.

Image of FIG. 5.
FIG. 5.

(a) Variation of writing power (pulse duration 200 ns) for and N-added . Shown in insets are the optical microscope images of the amorphous marks of the respective materials at 18 mW. (b) Growth time during crystallization of reamorphized marks with cyclic writing/erasing.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation on the role of nitrogen in crystallization of Sb-rich phase change materials