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(a) Electrical resistance of Sb–N films of varying N content as measured in situ at the heating rate of . (b) Carrier concentration, mobility, and resistivity of the crystalline Sb–N films.
XRD spectra of the Sb and Sb–N films at (a) as-deposited states and (b) annealed states at for 5 min, respectively. Vertical lines denote the 2 theta positions for pure Sb.
TEM images and the associated diffraction patterns of (a) Sb and (b) films, annealed at for 5 min.
and core level XPS spectra of the as-deposited and annealed states of Sb and films.
(a) Variation of writing power (pulse duration 200 ns) for and N-added . Shown in insets are the optical microscope images of the amorphous marks of the respective materials at 18 mW. (b) Growth time during crystallization of reamorphized marks with cyclic writing/erasing.
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