1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Toward an ideal Schottky barrier on -SiC
Rent:
Rent this article for
USD
10.1063/1.3211965
/content/aip/journal/apl/95/8/10.1063/1.3211965
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/8/10.1063/1.3211965
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

curves measured on diodes with a contact radius of , with and without the presence of a double positioning boundary defect. The DPB effectively destroys the rectifying properties of the contact. The inset shows an optical image of the surface of the -SiC, with patterned Au contacts. The visible defects include DPBs, SFs, and triangular pits.

Image of FIG. 2.
FIG. 2.

Schottky barrier heights as a function of contact radius. The values were extracted from measurements performed both in a conventional probe station (radius ) and using C-AFM . The continuous curve corresponds to the modeled values obtained from Eq. (3), using as the value of the defect density.

Image of FIG. 3.
FIG. 3.

C-AFM current map obtained over an area of , where SFs are visible as high conductivity lines. The SF density was estimated by dividing the total length of these lines by the scan area.

Loading

Article metrics loading...

/content/aip/journal/apl/95/8/10.1063/1.3211965
2009-08-27
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Toward an ideal Schottky barrier on 3C-SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/8/10.1063/1.3211965
10.1063/1.3211965
SEARCH_EXPAND_ITEM