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Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of on GaAs
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10.1063/1.3213545
/content/aip/journal/apl/95/8/10.1063/1.3213545
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/8/10.1063/1.3213545
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Figures

Image of FIG. 1.
FIG. 1.

characteristics of in situ on (a) -GaAs and (c) -GaAs; ex situ on (b) -GaAs and (d) -GaAs. All the were grown with TMA/IPA, except the inset of (b) (for inserted figures in (a) and (d), annealing treatment was performed before the growth for ex situ process. For inserted figure in (b), the were grown ex situ with ).

Image of FIG. 2.
FIG. 2.

HRTEM image of the interfaces between (a) native oxide/GaAs, (b) ex situ , and (c) ex situ . The was grown with TMA and IPA. The scale are the same in all figures.

Image of FIG. 3.
FIG. 3.

(a) XPS spectrum for clean GaAs surface (b) XPS spectrum at in situ -GaAs interface. The oxide above the interface was thinned by the argon ion gun with etching rate of 0.021 nm/min in XPS system and the residual thickness was estimated as 2.4 nm. The Shirley background subtraction was included in all XPS fittings. (c) The summary of distribution of all samples in the bandgap. (Closed and open symbols: in and ex situ process, respectively). was deposited with TMA/IPA unless specified. The open square represents the sample which annealing treatment was performed.

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/content/aip/journal/apl/95/8/10.1063/1.3213545
2009-08-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/8/10.1063/1.3213545
10.1063/1.3213545
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