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Spatial variations in local switching parameters of ferroelectric random access memory capacitors
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10.1063/1.3192354
/content/aip/journal/apl/95/9/10.1063/1.3192354
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3192354
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Topographic, (b) PFM amplitude, and (c) PFM phase images of the PZT capacitor. (d) Voltage pulse train used for BD-PFM studies.

Image of FIG. 2.
FIG. 2.

(a) Local PFM hysteresis loops measured in different locations on the surface of the PZT capacitor. Loop numbers correspond to location numbers shown in (c). (b) Conventional hysteresis loop measured in the same type of a PZT capacitor but larger dimensions . (c) 2D map of imprint bias in the PZT capacitor generated by SS-PFM. (d). Global PFM hysteresis loops measured in capacitors of different dimensions.

Image of FIG. 3.
FIG. 3.

Domain structure evolution delineated by means of BD-PFM in the capacitor (scan size is ). (a) Switching to a positive polarization state. Domain profiles are shown for dc bias of 0.40, 0.55, 0.60, and 0.70 V. (b) Switching to a negative polarization state. Domain profiles are shown for dc bias of −0.40, −0.45, −0.50, and −0.60 V.

Image of FIG. 4.
FIG. 4.

Domain structure evolution delineated by means of BD-PFM in the capacitor. (a) Switching to a positive polarization state. Domain profiles are shown for dc bias of 0.4, 0.5, 0.55, and 0.7 V. (b) Switching to a negative polarization state. Domain profiles are shown for dc bias of −0.45, −0.50, −0.55, −0.60, and −0.65 V.

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/content/aip/journal/apl/95/9/10.1063/1.3192354
2009-09-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spatial variations in local switching parameters of ferroelectric random access memory capacitors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3192354
10.1063/1.3192354
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