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[(a)–(d)] PCM device fabrication sequence, (e) a cross-sectional scanning electron microscope image of a device, (f) the electrical characterization setup.
(a) characteristics during RESET process of a PCM device at various temperatures, (b) temperature dependence of , (c) temperature dependence of and the fitting curves using an Arrhenius equation (dashed, red) and assuming a mixture of 99.98% amorphous and 0.02% crystalline GST phases disposed to form parallel resistors (solid, blue), and (d) -dependence of , where the corresponding was denoted. The solid line is a fitting curve (see text). (e) Temperature dependence of the RESET power .
(a) characteristics of a PCM device during SET processes at various temperatures, (b) temperature dependence of , (c) temperature dependence of , and (d) temperature dependence of .
Pulsed characteristics of a PCM at various temperatures. Inset: Temperature dependence of , normalized by the value at room temperature. A solid line is a fit to the curve.
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