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A study on the temperature dependence of characteristics of phase change memory devices
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10.1063/1.3211872
/content/aip/journal/apl/95/9/10.1063/1.3211872
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3211872
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

[(a)–(d)] PCM device fabrication sequence, (e) a cross-sectional scanning electron microscope image of a device, (f) the electrical characterization setup.

Image of FIG. 2.
FIG. 2.

(a) characteristics during RESET process of a PCM device at various temperatures, (b) temperature dependence of , (c) temperature dependence of and the fitting curves using an Arrhenius equation (dashed, red) and assuming a mixture of 99.98% amorphous and 0.02% crystalline GST phases disposed to form parallel resistors (solid, blue), and (d) -dependence of , where the corresponding was denoted. The solid line is a fitting curve (see text). (e) Temperature dependence of the RESET power .

Image of FIG. 3.
FIG. 3.

(a) characteristics of a PCM device during SET processes at various temperatures, (b) temperature dependence of , (c) temperature dependence of , and (d) temperature dependence of .

Image of FIG. 4.
FIG. 4.

Pulsed characteristics of a PCM at various temperatures. Inset: Temperature dependence of , normalized by the value at room temperature. A solid line is a fit to the curve.

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/content/aip/journal/apl/95/9/10.1063/1.3211872
2009-09-02
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A study on the temperature dependence of characteristics of phase change memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3211872
10.1063/1.3211872
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