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The cross-sectional view of the device. The dash line is the border of the Ge buffer layer. The emission was measured from the top by detecting the light escaping from the surface of the device.
The characteristic of the device.
The EL measurement of the device, the bias was ranging from 1.1 to 2.5 V. Peak shift curve is also shown in the figure.
The power of light emission vs current. The dash line is the linear-fit curve. We use the integral intensity of the EL spectrum instead of the real light power because they are proportional.
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