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Electroluminescence from Ge on Si substrate at room temperature
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10.1063/1.3216577
/content/aip/journal/apl/95/9/10.1063/1.3216577
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3216577
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The cross-sectional view of the device. The dash line is the border of the Ge buffer layer. The emission was measured from the top by detecting the light escaping from the surface of the device.

Image of FIG. 2.
FIG. 2.

The characteristic of the device.

Image of FIG. 3.
FIG. 3.

The EL measurement of the device, the bias was ranging from 1.1 to 2.5 V. Peak shift curve is also shown in the figure.

Image of FIG. 4.
FIG. 4.

The power of light emission vs current. The dash line is the linear-fit curve. We use the integral intensity of the EL spectrum instead of the real light power because they are proportional.

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/content/aip/journal/apl/95/9/10.1063/1.3216577
2009-08-31
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electroluminescence from Ge on Si substrate at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3216577
10.1063/1.3216577
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