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Scanning capacitance microscopy investigation on InGaAs/InP avalanche photodiode structures: Light-induced polarity reversal
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10.1063/1.3216847
/content/aip/journal/apl/95/9/10.1063/1.3216847
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3216847
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SCM images of the APD structure with the AFM laser spot at (a) the normal site and (b) away from the front edge of the cantilever. (c) SCM profiles along the growth direction of sample for four different laser spot sites which are sketched at the right.

Image of FIG. 2.
FIG. 2.

vs dc bias plot at the center point of InGaAs absorption layer under dark background.

Image of FIG. 3.
FIG. 3.

SCM profiles at a series of dc bias under strong background illumination.

Image of FIG. 4.
FIG. 4.

The calculated energy band profiles at the surface as well as that in the bulk along the growth direction.

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/content/aip/journal/apl/95/9/10.1063/1.3216847
2009-09-03
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning capacitance microscopy investigation on InGaAs/InP avalanche photodiode structures: Light-induced polarity reversal
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3216847
10.1063/1.3216847
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