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Optical and electron beam studies of carrier transport in quasibulk GaN
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10.1063/1.3220062
/content/aip/journal/apl/95/9/10.1063/1.3220062
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3220062
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of carrier lifetime, ambipolar diffusion coefficient, , and ambipolar diffusion length, , measured in HVPE GaN quasibulk epitaxial layer by LITG technique. The full (open) points correspond to high (low) excitation level of .

Image of FIG. 2.
FIG. 2.

Temperature dependence for directly obtained from the EBIC measurements on HVPE quasibulk epitaxial layer and the fit using Eq. (3) (solid curve). Inset: Arrhenius plot of the same data yielding the activation energy of .

Image of FIG. 3.
FIG. 3.

Temperature dependence for the peak CL intensity in HVPE quasibulk epitaxial layer and the fit using Eq. (4). The fit resulted in the activation energy of . Inset: CL spectra taken at different temperatures in the vicinity of the band-to-band transition. The redshift in CL maxima, observed with increasing temperature, is due to the temperature-induced widening of the GaN band gap.

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/content/aip/journal/apl/95/9/10.1063/1.3220062
2009-08-31
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical and electron beam studies of carrier transport in quasibulk GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3220062
10.1063/1.3220062
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