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Mapping bias-induced phase stability and random fields in relaxor ferroelectrics
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10.1063/1.3222868
/content/aip/journal/apl/95/9/10.1063/1.3222868
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3222868
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Surface topography (5 nm -scale) and (b) PFM phase signal of the PMN-10PT crystal surface. (c) Positive and (d) negative coercive bias SS-PFM maps. (e) Map of switchable polarization. (f) Work of switching SS-PFM map. The pixel size in panels [(c)–(f)] is 12.5 nm. The black lines in (c) are a contour map overlay of (b).

Image of FIG. 2.
FIG. 2.

(a) Piezoresponse SS-PFM map and [(b)–(d)] hysteresis loops from selected locations. The lower right corner in (a) is a region exhibiting an experimental artifact. PNB and NNB are indicated in [(b)–(d)]. Note that the PNB and NNB in (b) are close to zero. Panel a has a 12.5 nm pixel size and was acquired simultaneously with Figs. 1(c)–1(f).

Image of FIG. 3.
FIG. 3.

(a) Stability gap and (b) built-in field maps and [(c) and (d)] corresponding histograms. Panels (a) and (b) were constructed from the same SS-PFM data set shown partially in Figs. 1 and 2 and have a 12.5 nm pixel size. The black lines in (a) and (b) represent domain walls.

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/content/aip/journal/apl/95/9/10.1063/1.3222868
2009-09-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mapping bias-induced phase stability and random fields in relaxor ferroelectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3222868
10.1063/1.3222868
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