banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Mapping bias-induced phase stability and random fields in relaxor ferroelectrics
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

(a) Surface topography (5 nm -scale) and (b) PFM phase signal of the PMN-10PT crystal surface. (c) Positive and (d) negative coercive bias SS-PFM maps. (e) Map of switchable polarization. (f) Work of switching SS-PFM map. The pixel size in panels [(c)–(f)] is 12.5 nm. The black lines in (c) are a contour map overlay of (b).

Image of FIG. 2.
FIG. 2.

(a) Piezoresponse SS-PFM map and [(b)–(d)] hysteresis loops from selected locations. The lower right corner in (a) is a region exhibiting an experimental artifact. PNB and NNB are indicated in [(b)–(d)]. Note that the PNB and NNB in (b) are close to zero. Panel a has a 12.5 nm pixel size and was acquired simultaneously with Figs. 1(c)–1(f).

Image of FIG. 3.
FIG. 3.

(a) Stability gap and (b) built-in field maps and [(c) and (d)] corresponding histograms. Panels (a) and (b) were constructed from the same SS-PFM data set shown partially in Figs. 1 and 2 and have a 12.5 nm pixel size. The black lines in (a) and (b) represent domain walls.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mapping bias-induced phase stability and random fields in relaxor ferroelectrics