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Photoimpedance characterization of polymer field-effect transistor
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/content/aip/journal/apl/95/9/10.1063/1.3222978
2009-09-04
2014-09-20

Abstract

The small signal ac response is measured across the source-drain terminals of poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) field-effect transistor under dc bias to obtain the equivalent circuit parameters in the dark, and under a monochromatic light (540 nm) of various intensities. The numerically simulated response based on these parameters shows deviation at low frequency which is related to the charge accumulation at the interface and the contact resistance at the electrodes. This method can be used to differentiate the photophysical phenomena occurring in the bulk from that at the metal-semiconductor interface for polymerfield-effect transistors.

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Scitation: Photoimpedance characterization of polymer field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3222978
10.1063/1.3222978
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