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Floating-gate memory based on an organic metal-insulator-semiconductor capacitor
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A floating gate memory element is described which incorporates an evaporated goldfilm embedded in the gate dielectric of a metal-insulator-semiconductor capacitor based on poly(3-hexylthiophene). On exceeding a critical amplitude in the voltage sweep, hysteresis is observed in the capacitance-voltage and current-voltage characteristics of the device. The anticlockwise hysteresis in is consistent with strong electron trapping during the positive cycle but little hole trapping during the negative cycle. We argue that the clockwise hysteresis observed in the negative cycle of the plot, arises from leakage of trapped holes through the underlying insulator to the control gate.
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