Full text loading...
Schematic cross section of the studied SiN-passivated -gate device. The inset shows the low-frequency noise spectra between samples A and B.
Typical common-source current-voltage characteristics at 300 K. The insets illustrate and vs , and the off-state gate-drain current characteristics, respectively.
, , and PAE performances of the studied devices at 300 K. Shown in the inset are the , and the associated and characteristics.
Room-temperature microwave characteristics of the studied devices. The inset shows the and the associated gain characteristics.
Comparisons of key characteristics of the studied devices.
Article metrics loading...