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SiN-passivated -gate high electron mobility transistors by using a shifted exposure method
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10.1063/1.3224182
/content/aip/journal/apl/95/9/10.1063/1.3224182
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3224182

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross section of the studied SiN-passivated -gate device. The inset shows the low-frequency noise spectra between samples A and B.

Image of FIG. 2.
FIG. 2.

Typical common-source current-voltage characteristics at 300 K. The insets illustrate and vs , and the off-state gate-drain current characteristics, respectively.

Image of FIG. 3.
FIG. 3.

, , and PAE performances of the studied devices at 300 K. Shown in the inset are the , and the associated and characteristics.

Image of FIG. 4.
FIG. 4.

Room-temperature microwave characteristics of the studied devices. The inset shows the and the associated gain characteristics.

Tables

Generic image for table
Table I.

Comparisons of key characteristics of the studied devices.

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/content/aip/journal/apl/95/9/10.1063/1.3224182
2009-09-03
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: SiN-passivated Γ-gate Al0.27Ga0.73N/GaN high electron mobility transistors by using a shifted exposure method
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/9/10.1063/1.3224182
10.1063/1.3224182
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