1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces
Rent:
Rent this article for
USD
10.1063/1.3269906
/content/aip/journal/apl/96/1/10.1063/1.3269906
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/1/10.1063/1.3269906
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross sectional TEM images of a MIS structure (a) without and (b) with nitridation under rf power of 500 W. Also, (c) shows the magnified view of the nitrided MIS interface.

Image of FIG. 2.
FIG. 2.

(a) N 1s and (b) O 1s XPS spectra of InP surfaces exposed to ECR plasma as a parameter of the rf power.

Image of FIG. 3.
FIG. 3.

(a) and (b) P 2p XPS spectra taken from InP surfaces nitrided at 500 W with 2 nm thick films deposited by EB evaporation for MIS structures with and without nitridation and an InP substrate.

Image of FIG. 4.
FIG. 4.

C-V characteristics of a MIS structure without nitridation as a parameter of (a) the frequency and (b) the dc voltage sweep direction.

Image of FIG. 5.
FIG. 5.

C-V characteristics of a MIS structure with direct nitridation under the rf power of 500 W as a parameter of (a) the frequency and (b) the dc voltage sweep direction.

Image of FIG. 6.
FIG. 6.

(a) The values of hysteresis and flat band voltage shift and (b) the energy distribution of the fast interface trap density estimated from the Terman method for MIS capacitors with InP surface nitridation as a function of the rf power, in addition to the data without any nitridation.

Loading

Article metrics loading...

/content/aip/journal/apl/96/1/10.1063/1.3269906
2010-01-07
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/1/10.1063/1.3269906
10.1063/1.3269906
SEARCH_EXPAND_ITEM