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Cross sectional TEM images of a MIS structure (a) without and (b) with nitridation under rf power of 500 W. Also, (c) shows the magnified view of the nitrided MIS interface.
(a) N 1s and (b) O 1s XPS spectra of InP surfaces exposed to ECR plasma as a parameter of the rf power.
(a) and (b) P 2p XPS spectra taken from InP surfaces nitrided at 500 W with 2 nm thick films deposited by EB evaporation for MIS structures with and without nitridation and an InP substrate.
C-V characteristics of a MIS structure without nitridation as a parameter of (a) the frequency and (b) the dc voltage sweep direction.
C-V characteristics of a MIS structure with direct nitridation under the rf power of 500 W as a parameter of (a) the frequency and (b) the dc voltage sweep direction.
(a) The values of hysteresis and flat band voltage shift and (b) the energy distribution of the fast interface trap density estimated from the Terman method for MIS capacitors with InP surface nitridation as a function of the rf power, in addition to the data without any nitridation.
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