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and photoelectron spectra of Pr oxide films deposited using (a) and (b) . The take-off angle of photoelectrons is 90°.
TEM images and TED patterns of CVD-Pr oxide/Si samples. Pr oxide films were deposited using [(a)–(c)] and [(d)–(e)].
Growth temperature dependence of Pr-oxide thickness. Pr-oxide films were deposited using for 1 min.
(a) Leakage and (b) characteristics in Pt/CVD-Pr oxide/Si MOS capacitors. Pr oxide films were deposited using and .
(a) F–N and (b) P–F plots of characteristic at 300 K, and (c) Arrhenius plot of the P–F current at 2 V.
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