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Schematic of the C-V setup. : sample capacitor. : reference capacitor. : cable parasitics. and : ac voltages to balance the bridge. : voltage at the balance point. : dc voltage across the sample capacitor. The triangle in the figure represents a single-transistor common-source amplifier, of which is the output.
I-V characteristics of a Ti-CNT-Pd Schottky diode. The back gate voltage is stepped from −15 to 15 V. is applied to the Ti contact, while the Pd contact is held at 0 V.
curve. The capacitance between the Ti and Pd electrode is measured while the back gate is varied.
Measured curve. Simulation: The SBH is taken as 0.1 eV.
Capacitance at vs the SBH measured using the C-V technique. Closed symbols: measurement. Open symbols: electrostatic simulation, with two metal work functions (located at −0.1 and 0.1 eV relatively to the mid-gap level of the nanotube), assuming unpinned Fermi levels.
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