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Epitaxial growth of one-dimensional GaN nanostructures with enhanced near-band edge emission by chemical vapor deposition
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10.1063/1.3279147
/content/aip/journal/apl/96/1/10.1063/1.3279147
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/1/10.1063/1.3279147
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Figures

Image of FIG. 1.
FIG. 1.

Morphological evolution of GaN 1DNSs according to Ga supply: [(a)–(c)] SEM images (a) and (b) and the schematic structure (c) of hexagonal-faceted GaN nanopencils. [(d)–(f)] SEM images (d) and (e) and the schematic structure (f) of rough-surfaced, polygonal GaN nanotowers.

Image of FIG. 2.
FIG. 2.

(a) XRD scan (inset: rocking curve) and (b) azimuthal scan measurement results for GaN samples grown on a sapphire substrate.

Image of FIG. 3.
FIG. 3.

Spatially and spectrally resolved CL measurement results of GaN samples: thin film (I), GaN nanopencils (II-III), and GaN polygonal towers (IV). (a) SE and CL images. The scale bar is 200 nm. (b) CL emission spectra. (c) Relative CL emission intensities for GaN 1DNSs (II-IV) compared to GaN thin film (I).

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/content/aip/journal/apl/96/1/10.1063/1.3279147
2010-01-05
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of one-dimensional GaN nanostructures with enhanced near-band edge emission by chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/1/10.1063/1.3279147
10.1063/1.3279147
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