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Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure
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10.1063/1.3280384
/content/aip/journal/apl/96/1/10.1063/1.3280384
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/1/10.1063/1.3280384
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

[(a) and (b)] streak images of the GS emission obtained, respectively, for the QDs and the TI structures at weak excitation condition . (c) TRPL traces at the maximum of the PL intensity.

Image of FIG. 2.
FIG. 2.

Influence of the on the calculated temporal evolution of the TI structure GS population. The relevant model parameters are depicted on the level scheme. , , and .

Image of FIG. 3.
FIG. 3.

(a) Normalized and shifted TRPL traces from TI structure as a function of excitation power density. . (b) Influence of a total initial carrier concentration at on the calculated dynamics .

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/content/aip/journal/apl/96/1/10.1063/1.3280384
2010-01-04
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/1/10.1063/1.3280384
10.1063/1.3280384
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