Full text loading...
Absolute Seebeck coefficient of SOI wafers as a function of carrier concentration. The Seebeck coefficients of Si wafers obtained from our measurements and reported in the literature (Refs. 5–7) are also shown. The solid line represents the calculated value, and the broken and the dotted lines are drawn as an eye-guide.
Schematic of DOS distribution in an impurity level and a conduction band for a heavily doped semiconductor. and are the ionization energy and the energy width of the impurity band, respectively. and represent the original and the shifted conduction-band edges, respectively.
Density of states calculated for an impurity concentration of , , and , based on the three influences of the heavy doping. The original ionization energy is set to for the P atom and the arrows indicate the Fermi energies.
Energy derivative of DOS at the Fermi energy, computed on the basis of the three influences of the heavy doping, as a function of impurity concentration. The broken line is drawn as an eye-guide.
Article metrics loading...