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Effect of thermal annealing on the blueshift of energy gap and nitrogen rearrangement in GaAsSbN
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10.1063/1.3282797
/content/aip/journal/apl/96/1/10.1063/1.3282797
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/1/10.1063/1.3282797
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Figures

Image of FIG. 1.
FIG. 1.

(a) Room temperature (RT) absorption band gap and photoluminescence (PL) peak energy of GaAsSbN samples as functions of annealing temperature. Solid dots represent the absorption band gap and the hollow dots represent the PL peak energy. (b) RT absorption and PL spectra of GaAsSbN samples with different annealing treatments. Fitting curves for direct energy gap absorption and band-to-band PL are also depicted in the figure.

Image of FIG. 2.
FIG. 2.

(a) Room temperature (RT) Ga–N LVM absorbance spectra of GaAsSbN samples with different annealing treatments. (b) RT absorption band gap and the LVM absorbance of GaAsSbN as functions of the annealing temperature.

Image of FIG. 3.
FIG. 3.

(a) PR spectra of three GaAsSbN samples, as-grown, after 800 and annealing. (b) Kramers–Kronig modulus of the PR signals shown in (a). Different nitrogen neighbor structures are assigned in the figure.

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/content/aip/journal/apl/96/1/10.1063/1.3282797
2010-01-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of thermal annealing on the blueshift of energy gap and nitrogen rearrangement in GaAsSbN
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/1/10.1063/1.3282797
10.1063/1.3282797
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