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(a) SEM image of an Al strip (top) and a GNR (bottom) formed using the Al strip as etching mask; (b) Device structures and layout.
(a) Temperature-dependent transfer characteristics at 20 mV drain bias; (b) a typical transfer curve measured at 30 K showing conductance plateaus.
(a) Fitting of the experimental data using Landauer formula; (b) simulated gate capacitance using COMSOL.
(a) High field family I-Vs measured at 77 and 4.2 K (inset); (b) sketch of subband filling at the current saturation regime.
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