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A high- nanocrystal memory
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10.1063/1.3354027
/content/aip/journal/apl/96/10/10.1063/1.3354027
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/10/10.1063/1.3354027
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of dielectric films for as-deposited (W/O) and annealed at 700, 800, and .

Image of FIG. 2.
FIG. 2.

AFM images of films for: (a) as-deposited (W/O) and annealed at (b) 700, (c) 800, and (d) .

Image of FIG. 3.
FIG. 3.

XPS spectra of (a) , (b) , and (c) in films for as-deposited (W/O) and annealed at 700, 800, and .

Image of FIG. 4.
FIG. 4.

C-V curves of MOHOS-type memory devices under a sweeping voltage of ±9 V for as-deposited (W/O) and annealed at 700, 800, and . The inset shows the TEM image and diffraction pattern of nanocrystal film annealed at .

Image of FIG. 5.
FIG. 5.

(a) Program characteristics and (b) retention characteristics (programmed state) of MOHOS-type memory devices for as-deposited (W/O) and annealed at 700, 800, and .

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/content/aip/journal/apl/96/10/10.1063/1.3354027
2010-03-09
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A high-kTb2TiO5 nanocrystal memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/96/10/10.1063/1.3354027
10.1063/1.3354027
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