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(a) Leakage current density (J) of 30 nm thick Al-doped films with variation in the Al content, R, from 0 to 1. (b) Change in dielectric constant with Al content in the 30 nm thick Al-doped film depending on R. The dotted line is from the serially connected capacitor model shown in the inset.
(a) Band diagram of , , Pt, , and showing the band offset energy and the variation in the band gap energy. (b) Equilibrium of the band configuration after contacting, indicating the band offset of . The right diagram denotes the accumulation of electrons in the NW FET at by the alignment of the Fermi energies. (c) Leakage current density (J) at vs the estimated band offset of the Al doped (ATO) gate dielectrics. (d) The suggested diagram of the cycle number ratio of the ALD process (r) for optimizing the leakage current density and the dielectric constant. The dotted line indicates the case of the leakage current density at 1 V.
(a) Output characteristics of the NWs network FET with 30 nm thick Al doped (ATO) gate insulator, where a channel length and the width are 3 and , respectively. (b) Transfer curve of the NWs network FET. The gate voltage was swept from −0.4 to 0.4 V in 0.1 V steps. Here, the curve was obtained at . (c) Transfer curve of NWs network FETs with 30 nm thick gate insulator film. The inset is the output characteristics obtained with . (d) Transfer curve of NWs network FETs with 30 nm thick gate insulator film. The inset is the output characteristics obtained with .
(a) Threshold voltages of NWs-FET with Al-doped at (square), (circle), and (triangle) insulator as a function of the equivalent oxide thickness (EOT). (b) S.S of NWs-FETs as a function of EOT. Square, circle, and triangle are for Al-doped , , and , respectively. Here, the open symbols are the estimated values from the calculation.
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